pn5134 npn silicon transistor description: the central semiconductor pn5134 is a small signal npn silicon transistor designed for general purpose amplifier applications. marking: full part number to-92 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 3.5 v continuous collector current i c 500 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 200 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i ces v cb =15v 0.4 a i cbo v cb =15v, t a =65c 10 a bv ces i c =10a 20 v bv cbo i c =10a 20 v bv ceo i c =10ma 10 v bv ebo i e =10a 3.5 v v ce(sat) i c =10ma, i b =1.0ma 0.25 v v ce(sat) i c =10ma, i b =3.3ma 0.20 v v be(sat) i c =10ma, i b =1.0ma 0.70 0.9 v v be(sat) i c =10ma, i b =3.3ma 0.72 1.1 v h fe v ce =1.0v, i c =10ma 20 150 h fe v ce =0.4v, i c =30ma 15 c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 pf h fe v ce =10v, i c =10ma, f=100mhz 2.5 r0 (6-april 2011) www.centralsemi.com
pn5134 npn silicon transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units t on v cc =3.0v, i c =10ma, i b1 =3.3ma 18 ns t d v cc =3.0v, i c =10ma, i b1 =3.3ma 14 ns t r v cc =3.0v, i c =10ma, i b1 =3.3ma 12 ns t off v cc =3.0v, i c =10ma, i b1 =i b2 =3.3ma 18 ns t s v cc =3.0v, i c =10ma, i b1 =i b2 =3.3ma 13 ns t f v cc =3.0v, i c =10ma, i b1 =i b2 =3.3ma 13 ns www.centralsemi.com r0 (6-april 2011)
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